IIT Delhi, BTPL collaborate to develop diamond based deep UV photodetectors

NEW DELHI: The Indian Institute of Technology (IIT) Delhi has partnered with Bhathwari Technologies Pvt Ltd. (BTPL), a company based in Surat specializing in the synthesis of diamonds using the Chemical Vapour Deposition (CVD) technique. This collaboration represents the first initiative in India focused on the development of diamond-based deep ultraviolet (UV) photodetectors.

As stated in the official press release, diamond, recognized as a third-generation wide band gap semiconductor, will be utilized as a deep UV photodetector. This application is expected to enhance the deep UV photo response and improved efficiency, making it well-suited for defense and space applications.

Bakul bhai Limbasiya, Chairman, BTPL, said, “We had synthesized the first Lab Grown Diamond (LGD) in India in 2001 and since then are actively engaged in developing the CVD reactors and related technology for LGDs.” He added, “This collaboration is a joint Academia-Industry collaboration for the indigenous development of Diamond based photodetectors for the first time in India and is in line with the call of “Make in India” and “Atmanirbhar Bharat” given by our Hon. Prime Minister Shri. Narendra Modi.”

Applications and advantages of deep UV photodetectors

According to the official press release, deep UV photodetectors have applications in the area, including UV imaging, secure communication, biological detection, and military detection, among others. These photodetectors offer significant advantages, such as a highly selective photo response in the deep UV spectrum and high efficiency at room temperature (RT) as well as elevated temperatures.

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BTPL to provide high quality CVD grown diamond samples

In this collaborative effort, BTPL will supply high-quality diamond samples grown using the Chemical Vapour Deposition (CVD) method to IIT Delhi. The design and development of the UV photodetectors will be conducted by researchers at IIT Delhi, under the leadership of Rajendra Singh from the department of physics.

Rajendra Singh’s research group in India has experience in developing UV and Deep UV photodetector technology based on wide bandgap semiconductor materials such as Gallium nitride (GaN), Aluminum gallium nitride (AlGaN), Alumimun nitride (AlN) and Gallium oxide (Ga2O3).

Applications in electronic and optoelectronic devices

Singh said, “Diamond is an ultra-wide bandgap semiconductor and possess many interesting properties that could be useful for its applications in electronic and optoelectronic devices. This collaboration will accelerate the research and development in the area of diamond as a material and for its device applications.”