IIT Jodhpur fabricates resistive memory device for high-density data storage applications
The high-performance device called "Memristor" is made with high on and off ratio, fast operation speed, good RAM performance, long retention time and endurance.
Press Trust of India | July 11, 2022 | 07:53 PM IST
NEW DELHI : Researchers at the Indian Institute of Technology (IIT), Jodhpur have fabricated a resistive memory device with ultra low power consumption for high-density data storage applications. According to officials, the high-performance device called "Memristor" is made up of cadmium selenide (CdSe) quantum dots (QDs) with a high on and off ratio, fast operation speed, good Random-Access Memory (RAM) performance, and long retention time and endurance of over 150 switching cycles. This device can also be used as high-density storage, as it can perform logical operations with fast operation speed, they said.
Also Read | ‘New problem for the poor’: Aadhaar card for children makes UP school admissions a hassle
"The current commercial memory technologies available in the market are Hard Disk Drive (HDD), USB flash drive, SD card, Solid State Drive (SDD), Dynamical Random Access Memory (DRAM) and Static Random Access Memory (SRAM) to store data in electronic devices. These data storage devices cannot store vast amounts of data generated by digital globalisation and the internet of things (IOTs)," said Satyajit Sahu, Associate Professor, Department of Physics, IIT Jodhpur.
"To store the massive data in a small device, miniaturisation of memory devices is needed. But, the silicon-based memory technologies are facing serious reliability issues upon downscaling to a few nanometres. "Hence, current memory technologies cannot fulfil the requirement of high-density data storage devices. Therefore, new memory technologies are needed for high-density storage," added Sahu. The device has a significantly lower ultimate power consumption and fast operation speed which is around 41 nanoseconds.
Also Read | NCERT textbook revision politically motivated, changes made without academic logic: AIPSN
"The research will revolutionise the way memory elements are used for information storage and processing applications as this provides a platform to fabricate a very low-cost and ultra-low power memory device. It has a great potential to be used as a high-performance low powered RRAM (Resistive Random Access Memory) in the future," Sahu said. "The researchers are also investigating the human brain-inspired neuromorphic computing in quantum dots-based resistive memory devices, which will have a great potential to be used in the field of artificial synapse," he added.
Follow us for the latest education news on colleges and universities, admission, courses, exams, research, education policies, study abroad and more..
To get in touch, write to us at news@careers360.com.
Next Story
]Featured News
]- CBSE Exam 2025: Tips, strategies for Class 10 students to ace Physics, Chemistry and Biology
- Who is the JNU professor booked in NAAC bribe-for-grade case?
- Education Budget 2025: Just adding 10,000 MBBS seats won’t fix India’s healthcare crisis, say experts
- Education Budget 2025: Modi government cuts Rs 1,000 crore from minority, ST scholarships
- Higher Education Budget 2025: Outlay crosses Rs 50,000 crore; massive PMRF boost; IITs to add 6,500 seats
- Education Budget 2025 Highlights: Samagra Shiksha, PM SHRI see outlays rise while JNVs face cuts
- Household Consumption Expenditure Survey 2023-24: Education spending shrinks in villages, swells in cities
- Economic Survey 2024-25 highlights skills mismatch; over 50% graduates, 40% postgraduates underemployed
- Parents paid FIITJEE coaching fees from life insurance payouts, loans; they demand refunds
- ‘They demanded I delete photos’: I was warned off reporting on a zero-enrolment Kolkata school